@article{Li2019, 
author = {Guopeng Li and Jingsheng Huang and Yanqing Li and Jianxin Tang and Yang Jiang},
title = {Highly bright and low turn-on voltage CsPbBr3 quantum dot LEDs via conjugation molecular ligand exchange},
year = {2019},
journal = {Nano Research},
volume = {12},
number = {1},
pages = {109-114},
keywords = {perovskite, CsPbBr3 quantum dots, light-emitting diodes, ligand exchange, π-conjugation},
url = {https://www.sciopen.com/article/10.1007/s12274-018-2187-5},
doi = {10.1007/s12274-018-2187-5},
abstract = {All-inorganic CsPbBr3 perovskite quantum dots (QDs) hold great promise as candidate materials for next-generation electroluminescent displays owing to their excellent optoelectronic properties. However, the long insulating ligands on the surface of CsPbBr3 QDs originating from the synthesis process hinder the fabrication of high-performance optoelectronic devices. Herein, an efficient ligand-exchange route is proposed with the use of perovskite-precursor-based halide ligands, including a series of phenalkylammonium bromides with a π-conjugation benzene ring and different branch lengths. Based on the ligand-exchange method, the conductivity of the CsPbBr3 QD layer is significantly improved owing to ligand shortening and the insertion of the π-conjugation benzene ring. As a result, high brightness (up to 12, 650 cd/m2) and low turn-on voltage (as low as 2.66 V) can be realized in CsPbBr3 QD light-emitting diodes (QLEDs), leading to dramatic improvements in device performance with a current efficiency of 13.43 cd/A, power efficiency of 12.05 lm/W, and external quantum efficiency of 4.33%.}
}