@article{Wang2018, 
author = {Dongfei Wang and Hua Yu and Lei Tao and Wende Xiao and Peng Fan and Tingting Zhang and Mengzhou Liao and Wei Guo and Dongxia Shi and Shixuan Du and Guangyu Zhang and Hongjun Gao},
title = {Bandgap broadening at grain boundaries in single-layer MoS2},
year = {2018},
journal = {Nano Research},
volume = {11},
number = {11},
pages = {6102-6109},
keywords = {MoS2, grain boundary, scanning tunneling microscopy, bandgap},
url = {https://www.sciopen.com/article/10.1007/s12274-018-2128-3},
doi = {10.1007/s12274-018-2128-3},
abstract = {Two-dimensional semiconducting transition-metal dichalcogenides have attracted considerable interest owing to their unique physical properties and future device applications. In particular, grain boundaries (GBs) have been often observed in single-layer MoS2 grown via chemical vapor deposition, which can significantly influence the material properties. In this study, we examined the electronic structures of various GBs in single-layer MoS2 grown on highly oriented pyrolytic graphite using low-temperature scanning tunneling microscopy/spectroscopy. By measuring the local density of states of a series of GBs with tilt angles ranging from 0° to 25°, we found that the bandgaps at the GBs can be either broadened or narrowed with respect to the intrinsic single-layer MoS2. The bandgap broadening shows that the GBs can become more insulating, which may directly influence the transport properties of nanodevices based on polycrystalline single-layer MoS2 and be useful for optoelectronics.}
}