@article{Gong2018, 
author = {Yan Gong and Kejing Zhu and Zhe Li and Yunyi Zang and Xiao Feng and Ding Zhang and Canli Song and Lili Wang and Wei Li and Xi Chen and Xu-Cun Ma and Qi-Kun Xue and Yong Xu and Ke He},
title = {Experimental evidence of the thickness- and electric-field-dependent topological phase transitions in topological crystalline insulator SnTe(111) thin films},
year = {2018},
journal = {Nano Research},
volume = {11},
number = {11},
pages = {6045-6050},
keywords = {topological crystalline insulator, SnTe, quantum spin Hall effect, field effect},
url = {https://www.sciopen.com/article/10.1007/s12274-018-2120-y},
doi = {10.1007/s12274-018-2120-y},
abstract = {Using in situ angle-resolved photoemission spectroscopy, we systematically studied molecular-beam-epitaxy-grown topological crystalline insulator SnTe(111) thin films with varied thicknesses and substrate conditions. An oscillation in the band gap size with an increase in thickness was observed to depend on the electric field perpendicular to the films. The observations are consistent with the theoretically predicted thickness- and electric-field-dependent topological phase transitions between the normal insulator and the quantum spin Hall insulator phases in SnTe(111) films and demonstrate them to be an excellent and electrically tunable quantum spin Hall system.}
}