@article{Lu2021, 
author = {Donglin Lu and Zhenqing Li and Congsheng Xu and Siwei Luo and Chaoyu He and Jun Li and Gang Guo and Guolin Hao and Xiang Qi and Jianxin Zhong},
title = {Robust transport of charge carriers in in-plane 1Tʹ-2H MoTe2 homojunctions with ohmic contact},
year = {2021},
journal = {Nano Research},
volume = {14},
number = {5},
pages = {1311-1318},
keywords = {1T′-2H MoTe2 homojunction, ohmic contact, surface potential, built-in potential},
url = {https://www.sciopen.com/article/10.1007/s12274-020-3155-4},
doi = {10.1007/s12274-020-3155-4},
abstract = {Metal-semiconductor ohmic contacts are required to reduce the energy dissipation for two-dimensional (2D) electronic devices, and phase engineering of 2D transition-metal dichalcogenides (TMDCs) is a promising approach for building ohmic contacts. Here, 2D in-plane 1T′-2H MoTe2 homojunctions were prepared by direct epitaxy via vapor deposition. The interface properties of in-plane 1T′-2H MoTe2 homojunction were investigated in detail by combining experiments, calculations and theories. The ohmic contact properties of 1T′-2H MoTe2 homojunction were proved according to Kelvin force probe microscopy and density functional theory calculations. The charge carriers robust transport in in-plane 1T′-2H MoTe2 homojunction without Fermi-level pinning can be well described by Poisson equation and band alignment. These results indicate that phase engineering of 2D TMDCs is promising to construct ohmic contacts for device applications.}
}