@article{Yang2018, 
author = {Xun Yang and Anran Gao and Yuelin Wang and Tie Li},
title = {Wafer-level and highly controllable fabricated silicon nanowire transistor arrays on (111) silicon-on-insulator (SOI) wafers for highly sensitive detection in liquid and gaseous environments},
year = {2018},
journal = {Nano Research},
volume = {11},
number = {3},
pages = {1520-1529},
keywords = {silicon nanowire array, top-down, wafer-level, high-controllable, high-performance},
url = {https://www.sciopen.com/article/10.1007/s12274-017-1768-z},
doi = {10.1007/s12274-017-1768-z},
abstract = {This paper presents a wafer-level and highly controllable fabrication technology for silicon nanowire field-effect transistor (SiNW-FET arrays) on (111) silicon-on-insulator (SOI) wafers. Herein, 3, 000 SiNW FET array devices were designed and fabricated on 4-inch wafers with a rate of fine variety of more than 90% and a dimension deviation of the SiNWs of less than ± 20 nm in each array. As such, wafer-level and highly controllable fabricated SiNW FET arrays were realized. These arrays showed excellent electrical properties and highly sensitive determination of pH values and nitrogen dioxide. The high-performance of the SiNW FET array devices in liquid and gaseous environments can enable the detection under a wide range of conditions. This fabrication technology can lay the foundation for the large-scale application of SiNWs.}
}