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The discovery of ferroelectricity in hafnium oxide (HfO2) based thin films in 2011 renewed the interest in ferroelectrics. These new ferroelectrics possess completely different crystal morphology with conventional perovskite ferroelectrics, and present more robust ferroelectric properties upon aggressive scaling and compatibility with standard integrated circuit fabrication processes. In this article, we give a brief introduction to the conventional ferroelectric memories, then review the basic properties, recent progress, and memory applications of these HfO2-based ferroelectrics.


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Recent Progress and Applications of HfO2-Based Ferroelectric Memory

Show Author's information Xiao Liu1Xiangshun Geng1Houfang Liu1Minghao Shao1Ruiting Zhao1Yi Yang1Tian-Ling Ren1( )
Beijing National Research Center for Information Science and Technology (BNRist), School of Integrated Circuits, Tsinghua University, Beijing 100084, China

Abstract

The discovery of ferroelectricity in hafnium oxide (HfO2) based thin films in 2011 renewed the interest in ferroelectrics. These new ferroelectrics possess completely different crystal morphology with conventional perovskite ferroelectrics, and present more robust ferroelectric properties upon aggressive scaling and compatibility with standard integrated circuit fabrication processes. In this article, we give a brief introduction to the conventional ferroelectric memories, then review the basic properties, recent progress, and memory applications of these HfO2-based ferroelectrics.

Keywords:

ferroelectric memory, non-volatile memory, hafnium oxide, fluorite structure material
Received: 01 March 2021 Revised: 23 November 2021 Accepted: 22 December 2021 Published: 29 September 2022 Issue date: April 2023
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Publication history

Received: 01 March 2021
Revised: 23 November 2021
Accepted: 22 December 2021
Published: 29 September 2022
Issue date: April 2023

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© The author(s) 2023.

Acknowledgements

This work was supported by the National Key Basic R&D Program of China (Nos. 2016YFA0200400 and 2018YFC2001202), the National Natural Science Foundation of China (Nos. U20A20168, 61874065, and 51861145202), the Research Fund from Tsinghua University Initiative Scientific Research Program, the Beijing Innovation Center for Future Chip, and the Tsinghua-Fuzhou Institute for Date Technology (No. TFIDT2018008).

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