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Journal of Advanced Ceramics 2023, 12(5): 1046-1057 https://doi.org/10.26599/JAC.2023.9220737
Research Article | Open Access | Issue | Published: 11 April 2023

Dielectric barrier discharge-based defect engineering method to assist flash sintering

Show Author's Information Xinhao Zhaoa,  Nianping Yanb,  Yueji Lia,  Zikui Shenc,  Rongxia Huangd,  Chen Xue,  Xuetong Zhaof,  Xilin Wanga( ),  Ruobing Zhanga,  Zhidong Jiaa
Guangdong Engineering Technology Research Center of Power Equipment Reliability in Complicated Coastal Environments, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
State Grid Jiangxi Electric Power Research Institute, Nanchang 330096, China
School of Electric Power Engineering, South China University of Technology, Guangzhou 510641, China
School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China
Institute of Materials, China Academy of Engineering Physics, Mianyang 621907, China
School of Electrical Engineering, Chongqing University, Chongqing 400044, China
Keywords:
ZnO, defect engineering, flash sintering (FS), dielectric barrier discharge (DBD), oxygen vacancy OV
Cite this article:
Zhao X, Yan N, Li Y, et al. Dielectric barrier discharge-based defect engineering method to assist flash sintering. Journal of Advanced Ceramics, 2023, 12(5): 1046-1057. https://doi.org/10.26599/JAC.2023.9220737
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Abstract Full text About this article

Oxygen vacancy OV plays an important role in a flash sintering (FS) process. In defect engineering, the methods of creating oxygen vacancy defects include doping, heating, and etching, and all of them often have complex processes or equipment. In this study, we used dielectric barrier discharge (DBD) as a new defect engineering technology to increase oxygen vacancy concentrations of green billets with different ceramics (ZnO, TiO2, and 3 mol% yttria-stabilized zirconia (3YSZ)). With an alternating current (AC) power supply of 10 kHz, low-temperature plasma was generated, and a specimen could be treated in different atmospheres. The effect of the DBD treatment was influenced by atmosphere, treatment time, and voltage amplitude of the power supply. After the DBD treatment, the oxygen vacancy defect concentration in ZnO samples increased significantly, and a resistance test showed that conductivity of the samples increased by 2–3 orders of magnitude. Moreover, the onset electric field (E) of ZnO FS decreased from 5.17 to 0.86 kV/cm at room temperature (RT); while in the whole FS, the max power dissipation decreased from 563.17 to 27.94 W. The defect concentration and conductivity of the green billets for TiO2 and 3YSZ were also changed by the DBD, and then the FS process was modified. It is a new technology to treat the green billet of ceramics in very short time, applicable to other ceramics, and beneficial to regulate the FS process.


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About this article

Dielectric barrier discharge-based defect engineering method to assist flash sintering

Show Author's information Xinhao Zhaoa, Nianping Yanb, Yueji Lia, Zikui Shenc, Rongxia Huangd, Chen Xue, Xuetong Zhaof, Xilin Wanga( ), Ruobing Zhanga, Zhidong Jiaa
Guangdong Engineering Technology Research Center of Power Equipment Reliability in Complicated Coastal Environments, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
State Grid Jiangxi Electric Power Research Institute, Nanchang 330096, China
School of Electric Power Engineering, South China University of Technology, Guangzhou 510641, China
School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China
Institute of Materials, China Academy of Engineering Physics, Mianyang 621907, China
School of Electrical Engineering, Chongqing University, Chongqing 400044, China

Abstract

Oxygen vacancy OV plays an important role in a flash sintering (FS) process. In defect engineering, the methods of creating oxygen vacancy defects include doping, heating, and etching, and all of them often have complex processes or equipment. In this study, we used dielectric barrier discharge (DBD) as a new defect engineering technology to increase oxygen vacancy concentrations of green billets with different ceramics (ZnO, TiO2, and 3 mol% yttria-stabilized zirconia (3YSZ)). With an alternating current (AC) power supply of 10 kHz, low-temperature plasma was generated, and a specimen could be treated in different atmospheres. The effect of the DBD treatment was influenced by atmosphere, treatment time, and voltage amplitude of the power supply. After the DBD treatment, the oxygen vacancy defect concentration in ZnO samples increased significantly, and a resistance test showed that conductivity of the samples increased by 2–3 orders of magnitude. Moreover, the onset electric field (E) of ZnO FS decreased from 5.17 to 0.86 kV/cm at room temperature (RT); while in the whole FS, the max power dissipation decreased from 563.17 to 27.94 W. The defect concentration and conductivity of the green billets for TiO2 and 3YSZ were also changed by the DBD, and then the FS process was modified. It is a new technology to treat the green billet of ceramics in very short time, applicable to other ceramics, and beneficial to regulate the FS process.

Keywords: ZnO, defect engineering, flash sintering (FS), dielectric barrier discharge (DBD), oxygen vacancy OV

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Publication history
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Publication history

Received: 25 December 2022
Revised: 25 February 2023
Accepted: 26 February 2023
Published: 11 April 2023
Issue date: May 2023

Copyright

© The Author(s) 2023.

Acknowledgements

This work was supported by the National Natural Science Foundation of China (No. 52077118), the Guangdong Basic and Applied Basic Research Foundation (No. 2021A1515011778), and State Key Laboratory of Power System Operation and Control, Tsinghua University (No. SKLD22KM01).

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