AI Chat Paper
Note: Please note that the following content is generated by AMiner AI. SciOpen does not take any responsibility related to this content.
{{lang === 'zh_CN' ? '文章概述' : 'Summary'}}
{{lang === 'en_US' ? '中' : 'Eng'}}
Chat more with AI
Article Link
Collect
Submit Manuscript
Show Outline
Outline
Show full outline
Hide outline
Outline
Show full outline
Hide outline
Research Article | Open Access

Electrical property enhancement and lattice thermal conductivity reduction of n-type Mg3Sb1.5Bi0.5-based Zintl compound by In&Se co-doping

Tong LiuaJiansong LiaoaHang LiuaRunyu WangaGuocai YuanaJing JiangbYi NiubXiaobo LeiaLihong Huanga( )Chao Wangb( )Qinyong Zhanga( )
Key Laboratory of Fluid and Power Machinery of Ministry of Education, School of Materials Science & Engineering, Xihua University, Chengdu, 610039, China
Clean Energy Materials and Engineering Center, State Key Laboratory of Electronic Thin Film and Integrated Device, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China

Peer review under responsibility of The Chinese Ceramic Society.

Show Author Information

Graphical Abstract

Abstract

Mg3Sb1.5Bi0.5-based Zintl compounds have attracted extensive attention as potential thermoelectric materials due to their earth-abundant elements. However, pure and intrinsic Mg3Sb1.5Bi0.5 manifests a poor thermoelectric performance because of its low electrical conductivity of about 3 × 102 S/m at room temperature. In this work, In and Se co-doping was carried out to optimize the thermoelectric performance of n-type Mg3Sb1.5Bi0.5-based material. The experimental results revealed that the carrier concentration and mobility of Mg3Sb1.5Bi0.5 significantly increased after In and Se co-doping, leading to an improvement of power factor. Simultaneously, lattice thermal conductivity was significantly reduced due to the large mass difference between In and Mg. A maximum zT of 1.64 at 723 K was obtained for the Mg3.17In0.03Sb1.5Bi0.49Se0.01 sample. And an average zT value of about 1.1 between 300 and 723 K was achieved, which insures its possible application at medium temperature range as a non-toxic and low-cost TE material.

References

[1]

Liu WS, Jie Q, Kim HS, Ren ZF. Current progress and future challenges in thermoelectric power generation: from materials to devices. Acta Mater 2015;87:357–76. https://doi.org/10.1016/j.actamat.2014.12.042.

[2]

Arico AS, Bruce P, Scrosati B, Tarascon JM, Van Schalkwijk W. Nanostructured materials for advanced energy conversion and storage devices. Nat Mater 2005;4:366–77. https://doi.org/10.1038/nmat1368.

[3]

Snyder GJ, Toberer ES. Complex thermoelectric materials. Nat Mater 2008;7:105–14. https://doi.org/10.1038/nmat2090.

[4]

Shuai J, Mao J, Song SW, Zhu Q, Sun JF, Wang YM, et al. Tuning the carrier scattering mechanism to effectively improve the thermoelectric properties. Energy Environ Sci 2017;10:799–807. https://doi.org/10.1039/c7ee00098g.

[5]

Imasato K, Kang SD, Ohno S, Snyder GJ. Band engineering in Mg3Sb2 by alloying with Mg3Bi2 for enhanced thermoelectric performance. Mater Horiz 2018;5:59–64. https://doi.org/10.1039/c7mh00865a.

[6]

Pei Y, Shi X, LaLonde A, Wang H, Chen L, Snyder GJ. Convergence of electronic bands for high performance bulk thermoelectrics. Nature 2011;473:66–9. https://doi.org/10.1038/nature09996.

[7]

Tang YL, Gibbs ZM, Agapito LA, Li G, Kim HS, Nardelli MB, et al. Convergence of multi-valley bands as the electronic origin of high thermoelectric performance in CoSb3 skutterudites. Nat Mater 2015;14:1223–8. https://doi.org/10.1038/nmat4430.

[8]

Bu Z, Chen Z, Zhang X, Lin S, Mao J, Li W, et al. Near-room-temperature rhombohedral Ge1-xPbxTe thermoelectrics. Mater. Today Phys. 2020;15:100260. https://doi.org/10.1016/j.mtphys.2020.100260.

[9]

Chauhan NS, Bathula S, Gahtori B, Kolen’ko YV, Dhar A. Enhanced thermoelectric performance in Hf-free p-type (Ti, Zr)CoSb half-heusler alloys. J Electron Mater 2019;48:6700–9. https://doi.org/10.1007/s11664-019-07486-y.

[10]

Wang Y, Zhang X, Liu Y, Wang Y, Liu H, Zhang J. Enhanced electrical transport performance through cation site doping in Y-doped Mg3.2 Sb2. J. Materiomics 2020;6:216–23. https://doi.org/10.1016/ j.jmat.2019.12.007.

[11]

Kuo JJ, Kang SD, Imasato K, Tamaki H, Ohno S, Kanno T, et al. Grain boundary dominated charge transport in Mg3Sb2-based compounds. Energy Environ Sci 2018;11:429–34. https://doi.org/10.1039/c7ee03326e.

[12]

Chen X, Wu H, Cui J, Xiao Y, Zhang Y, He J, et al. Extraordinary thermoelectric performance in n-type manganese doped Mg3Sb2 Zintl: high band degeneracy, tuned carrier scattering mechanism and hierarchical microstructure. Nano Energy 2018;52:246–55. https://doi.org/10.1016/j.nanoen.2018.07.059.

[13]

Li J, Jia F, Zhang S, Zheng SQ, Wang BY, Chen LQ, et al. The manipulation of substitutional defects for realizing high thermoelectric performance in Mg3Sb2-based Zintl compounds. J Mater Chem 2019;7:19316–23. https://doi.org/10.1039/c9ta06889a.

[14]

Li J, Zhang S, Jia F, Zheng S, Shi X, Jiang D, et al. Point defect engineering and machinability in n-type Mg3Sb2-based materials. Mater. Today Phys. 2020;15:100269. https://doi.org/10.1016/ j.mtphys.2020.100269.

[15]

Wang Y, Zhang X, Liu Y, Wang Y, Zhang J, Yue M. Optimizing the thermoelectric performance of p-type Mg3Sb2 by Sn doping. Vacuum 2020;177:109388. https://doi.org/10.1016/j.vacuum.2020.109388.

[16]

Zebarjadi M, Joshi G, Zhu G, Yu B, Minnich A, Lan Y, et al. Power factor enhancement by modulation doping in bulk nanocomposites. Nano Lett 2011;11:2225–30. https://doi.org/10.1021/nl201206d.

[17]

Pei Y, LaLonde AD, Wang H, Snyder GJ. Low effective mass leading to high thermoelectric performance. Energy Environ Sci 2012:5. https://doi.org/10.1039/c2ee21536e.

[18]

Shuai J, Ge BH, Mao J, Song SW, Wang YM, Ren ZF. Significant role of Mg stoichiometry in designing high thermoelectric performance for Mg3(Sb,Bi)2-Based n-type Zintls. J Am Chem Soc 2018;140:1910–5. https://doi.org/10.1021/jacs.7b12767.

[19]

Zhang ZW, Wang XY, Liu YJ, Chen C, Yao HH, Yin L, et al. Balancing the anionic framework polarity for enhanced thermoelectric performance in YbMg2Sb2 Zintl compounds. J Materiomics 2019;5:583–9. https://doi.org/10.1016/j.jmat.2019.08.002.

[20]

Song SW, Mao J, Bordelon M, He R, Wang YM, Shuai J, et al. Joint effect of magnesium and yttrium on enhancing thermoelectric properties of n-type Zintl Mg3+xY0.02Sb1.5Bi0.5. Mater Today Phys 2019;8:25–33. https://doi.org/10.1016/j.mtphys.2018.12.004.

[21]

Shuai J, Geng HY, Lan YC, Zhu Z, Wang C, Liu ZH, et al. Higher thermoelectric performance of Zintl phases (Eu0.5Yb0.5)(1-x)CaxMg2Bi2 by band engineering and strain fluctuation. Proc Natl Acad Sci USA 2016;113:E4125–32. https://doi.org/10.1073/pnas.1608794113.

[22]

Guo M, Zhu J, Guo F, Zhang Q, Cai W, Sui J. Enhanced thermoelectric performance of P-type CaMg2Bi1.98 and optimized CaAl2Si2-type Zintl phase module with equal cross-section area. Mater. Today Phys. 2020;15:100270. https://doi.org/10.1016/j.mtphys.2020.100270.

[23]

Gorai P, Stevanović V. Comment on “understanding the intrinsic P-type behavior and phase stability of thermoelectric α-Mg3Sb2.”. ACS Appl Energy Mater 2019;3:106–8. https://doi.org/10.1021/ acsaem.9b01918.

[24]

Xu C, Liang Z, Shang H, Wang D, Wang H, Ding F, et al. Scalable synthesis of n-type Mg3Sb2-xBix for thermoelectric applications. Mater. Today Phys 2021;17:100336. https://doi.org/10.1016/ j.mtphys.2020.100336.

[25]

Cui Y, Zhang X, Duan B, Li J, Yang H, Wang H, et al. Band structure and thermoelectric properties of Al-doped Mg3–xAlxSb2 compounds. J Mater Sci Mater Electron 2019;30:15206–13. https://doi.org/10.1007/s10854-019-01893-x.

[26]

Condron CL, Kauzlarich SM, Gascoin F, Snyder GJ. Thermoelectric properties and microstructure of Mg3Sb2. J Solid State Chem 2006;179:2252–7. https://doi.org/10.1016/j.jssc.2006.01.034.

[27]

Tamaki H, Sato HK, Kanno T. Isotropic conduction network and defect chemistry in Mg3+δSb2 -based layered Zintl compounds with high thermoelectric performance. Adv Mater 2016;28:10182–7. https://doi.org/10.1002/adma.201603955.

[28]

Mao J, Wu Y, Song S, Shuai J, Liu Z, Pei Y, et al. Anomalous electrical conductivity of n-type Te-doped Mg3.2Sb1.5Bi0.5. Mater. Today Phys 2017;3:1–6. https://doi.org/10.1016/j.mtphys.2017.08.001.

[29]

Gorai P, Ortiz BR, Toberer ES, Stevanović V. Investigation of n-type doping strategies for Mg3Sb2. J Mater Chem 2018;6:13806–15. https://doi.org/10.1039/c8ta03344g.

[30]

Wang Y, Zhang X, Wang Y, Liu H, Zhang J. Enhanced thermoelectric properties of n-type Mg3Sb2 by excess magnesium and tellurium doping. Phys Status Solidi A 2019;216:1800811. https://doi.org/10.1002/pssa.201800811.

[31]

Mo X, Liao J, Yuan G, Zhu S, Lei X, Huang L, et al. High thermoelectric performance at room temperature of n-type Mg3Bi2-based materials by Se doping. J Magnesium Alloys 2021. https://doi.org/10.1016/ j.jma.2020.11.023.

[32]

Mao J, Wu YX, Song SW, Zhu Q, Shuai J, Liu ZH, et al. Defect engineering for realizing high thermoelectric performance in n-type Mg3Sb2-based materials. ACS Energy Lett 2017;2:2245–50. https://doi.org/10.1021/acsenergylett.7b00742.

[33]

Mao J, Shuai J, Song S, Wu Y, Dally R, Zhou J, et al. Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg3Sb2-based materials. Proc Natl Acad Sci U. S. A. 2017;114:10548–53. https://doi.org/10.1073/pnas.1711725114.

[34]

Wood M, Kuo JJ, Imasato K, Snyder GJ. Improvement of low-temperature zT in a Mg3Sb2 -Mg3Bi2 solid solution via Mg-vapor annealing. Adv Mater 2019;31:1190–2337. https://doi.org/10.1002/adma.201902337.

[35]

Kanno T, Tamaki H, Sato HK, Kang SD, Ohno S, Imasato K, et al. Enhancement of average thermoelectric figure of merit by increasing the grain-size of Mg3.2Sb1.5Bi0.49Te0.01. Appl Phys Lett 2018;112:033903. https://doi.org/10.1063/1.5016488.

[36]

Zhang J, Song L, Pedersen SH, Yin H, Hung LT, Iversen BB. Discovery of high-performance low-cost n-type Mg3Sb2-based thermoelectric materials with multi-valley conduction bands. Nat Commun 2017;8:13901. https://doi.org/10.1038/ncomms13901.

[37]

Imasato K, Kang SD, Ohno S, Snyder GJ. Band engineering in Mg3Sb2 by alloying with Mg3Bi2 for enhanced thermoelectric performance. Mater Horiz 2018;5:59–64.

[38]

Shuai J, Mao J, Song S, Zhu Q, Sun J, Wang Y, et al. Tuning the carrier scattering mechanism to effectively improve the thermoelectric properties. Energy Environ Sci 2017;10:799–807. https://doi.org/10.1039/c7ee00098g.

[39]

Chen XX, Wu HJ, Cui J, Xiao Y, Zhang Y, He JQ, et al. Extraordinary thermoelectric performance in n-type manganese doped Mg3Sb2 Zintl: high band degeneracy, tuned carrier scattering mechanism and hierarchical microstructure. Nano Energy 2018;52:246–55. https://doi.org/10.1016/j.nanoen.2018.07.059.

[40]

Zhang J, Song L, Mamakhel A, Jørgensen MRV, Iversen BB. High-performance low-cost n-type Se-doped Mg3Sb2-based Zintl compounds for thermoelectric application. Chem Mater 2017;29:5371–83. https://doi.org/10.1021/acs.chemmater.7b01746.

[41]

Zhang J, Song L, Pedersen SH, Yin H, Hung LT, Iversen BB. Discovery of high-performance low-cost n-type Mg3Sb2-based thermoelectric materials with multi-valley conduction bands. Nat Commun 2017;8:13901. https://doi.org/10.1038/ncomms13901.

[42]

Zhang F, Chen C, Yao H, Bai F, Yin L, Li X, et al. High-performance N-type Mg3Sb2 towards thermoelectric application near room temperature. Adv Funct Mater 2019;30. https://doi.org/10.1002/adfm.201906143.

[43]

Wood M, Kuo JJ, Imasato K, Snyder GJ. Improvement of low-temperature zT in a Mg3Sb2 -Mg3Bi2 solid solution via Mg-vapor annealing. Adv Mater 2019;31:e1902337. https://doi.org/10.1002/ adma.201902337.

[44]

Hu C, Xia K, Fu C, Zhao X, Zhu T. Carrier grain boundary scattering in thermoelectric materials. Energy Environ Sci 2022;15:1406–22. https://doi.org/10.1039/d1ee03802h.

[45]

Agne MT, Imasato K, Anand S, Lee K, Bux SK, Zevalkink A, et al. Heat capacity of Mg3Sb2, Mg3Bi2, and their alloys at high temperature. Mater. Today Phys. 2018;6:83–8. https://doi.org/10.1016/j.mtphys.2018.10.001.

[46]

Kanno T, Tamaki H, Sato HK, Kang SD, Ohno S, Imasato K, et al. Enhancement of average thermoelectric figure of merit by increasing the grain-size of Mg3.2Sb1.5Bi0.49Te0.01. Appl Phys Lett 2018;112. https://doi.org/10.1063/1.5016488.

[47]

He R, Kraemer D, Mao J, Zeng L, Jie Q, Lan Y, et al. Achieving high power factor and output power density in p-type half-Heuslers Nb1-xTixFeSb. Proc Natl Acad Sci U. S. A. 2016;113:13576–81. https://doi.org/10.1073/pnas.1617663113.

[48]

Pei Y, Wang H, Snyder GJ. Band engineering of thermoelectric materials. Adv Mater 2012;24:6125–35. https://doi.org/10.1002/adma.201202919.

[49]

Huang L, Wang J, Chen X, He R, Shuai J, Zhang J, et al. The effects of excess Co on the phase composition and thermoelectric properties of half-heusler NbCoSb. Materials 2018;11. https://doi.org/10.3390/ma11050773.

[50]

Zhang F, Chen C, Li S, Yin L, Yu B, Sui J, et al. Enhanced thermoelectric performance in N-type Mg3.2Sb1.5Bi0.5 by La or Ce doping into Mg. Adv Electron Mater 2020:6. https://doi.org/10.1002/aelm.201901391.

[51]

Liang JS, Shi XL, Peng Y, Liu WD, Yang HQ, Liu CY, et al. Synergistic effect of band and nanostructure engineering on the boosted thermoelectric performance of n-type Mg3+δ(Sb, Bi)2 Zintls. Adv Energy Mater 2022. https://doi.org/10.1002/aenm.202201086.

Journal of Materiomics
Pages 431-437
Cite this article:
Liu T, Liao J, Liu H, et al. Electrical property enhancement and lattice thermal conductivity reduction of n-type Mg3Sb1.5Bi0.5-based Zintl compound by In&Se co-doping. Journal of Materiomics, 2023, 9(3): 431-437. https://doi.org/10.1016/j.jmat.2022.11.012

183

Views

9

Crossref

9

Web of Science

9

Scopus

Altmetrics

Received: 10 October 2022
Revised: 04 November 2022
Accepted: 24 November 2022
Published: 29 January 2023
© 2023 The Authors.

This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).

Return