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Research paper | Open Access

Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors

Chen Liua, Binjian Zenga,b( ), Siwei Daia, Shuaizhi Zhenga, Qiangxiang Penga, Jinjuan Xiangd, Jianfeng Gaod, Jie Zhaod, Jincheng Zhange, Min Liaoa,c( ), Yichun Zhoua,c
Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China
College of Civil Engineering and Mechanics, Xiangtan University, Xiangtan, 411105, China
School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710071, China
Integrated Circuit Advanced Process R&D Center and Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, China
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China

Peer review under responsibility of The Chinese Ceramic Society.

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Graphical Abstract

Abstract

Multilevel ferroelectric field−effect transistors (FeFETs) integrated with HfO2−based ferroelectric thin films demonstrate tremendous potential in high−speed massive data storage and neuromorphic computing applications. However, few works have focused on the stability of the multiple memory states in the HfO2−based FeFETs. Here we firstly report the write/read disturb effects on the multiple memory states in the Hf0.5Zr0.5O2 (HZO)−based FeFETs. The multiple memory states in HZO−based FeFETs do not show obvious degradation with the write and read disturb cycles. Moreover, the retention characteristics of the intermediate memory states in HZO−based FeFETs with unsaturated ferroelectric polarizations are better than that of the memory state with saturated ferroelectric polarization. Through the deep analysis of the operation principle of in HZO−based FeFETs, we speculate that the better retention properties of intermediate memory states are determined by the less ferroelectric polarization degradation and the weaker ferroelectric polarization shielding. The experimental and theoretical evidences confirm that the long−term stability of the intermediate memory states in HZO−based FeFETs are as robust as that of the saturated memory state, laying a solid foundation for their practical applications.

Keywords

Ferroelectric field−effect transistors (FeFETs)Hf0.5Zr0.5O2 (HZO)Multiple memory statesWrite/read disturbRetention

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Journal of Materiomics
Volume 8 Issue 3,
May 2022
Pages 685-692
DOI: 10.1016/j.jmat.2021.11.003
Cite this article:
Liu C, Zeng B, Dai S, et al. Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors. Journal of Materiomics, 2022, 8(3): 685-692. https://doi.org/10.1016/j.jmat.2021.11.003

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Received: 12 August 2021
Revised: 31 October 2021
Accepted: 04 November 2021
Published: 12 November 2021
© 2021 The Chinese Ceramic Society.

This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
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