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Journal of Advanced Ceramics 2022, 11(9): 1417-1430 https://doi.org/10.1007/s40145-022-0620-4
Research Article | Open Access | Issue | Published: 18 August 2022

Microstructure evolution and growth mechanism of core–shell silicon-based nanowires by thermal evaporation of SiO

Show Author's Information Bing LIU,  Jia SUN( ),  Lei ZHOU,  Pei ZHANG,  Chenxin YAN,  Qiangang FU( )
State Key Laboratory of Solidification Processing, Shaanxi Key Laboratory of Fiber Reinforced Light Composite Materials, Northwestern Polytechnical University, Xi’an 710072, China
Keywords:
growth mechanism, thermal evaporation, SiC@SiO2 nanowires, Si@SiO2 nanowires, carbon/carbon (C/C) composites
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LIU B, SUN J, ZHOU L, et al. Microstructure evolution and growth mechanism of core–shell silicon-based nanowires by thermal evaporation of SiO. Journal of Advanced Ceramics, 2022, 11(9): 1417-1430. https://doi.org/10.1007/s40145-022-0620-4
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Abstract Full text About this article

Core–shell structured SiC@SiO2 nanowires and Si@SiO2 nanowires were prepared on the surface of carbon/carbon (C/C) composites by a thermal evaporation method using SiO powders as the silicon source and Ni(NO3)2 as the catalyst. The average diameters of SiC@SiO2 nanowires and Si@SiO2 nanowires are about 145 nm, and the core–shell diameter ratios are about 0.41 and 0.53, respectively. The SiO2 shells of such two nanowires resulted from the reaction between SiO and CO and the reaction of SiO itself, respectively, based on the model analysis. The growth of these two nanowires conformed to the vapor–liquid–solid (VLS) mode. In this mode, CO played an important role in the growth of nanowires. There existed a critical partial pressure of CO (pC) determining the microstructure evolution of nanowires into whether SiC@SiO2 or Si@SiO2. The value of pC was calculated to be 4.01×10−15 Pa from the thermodynamic computation. Once the CO partial pressure in the system was greater than the pC, SiO tended to react with CO, causing the formation of SiC@SiO2 nanowires. However, the decomposition of SiO played a predominant role and the products mainly consisted of Si@SiO2 nanowires. This work may be helpful for the regulation of the growth process and the understanding of the growth mechanism of silicon-based nanowires.


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About this article

Microstructure evolution and growth mechanism of core–shell silicon-based nanowires by thermal evaporation of SiO

Show Author's information Bing LIU, Jia SUN( ), Lei ZHOU, Pei ZHANG, Chenxin YAN, Qiangang FU( )
State Key Laboratory of Solidification Processing, Shaanxi Key Laboratory of Fiber Reinforced Light Composite Materials, Northwestern Polytechnical University, Xi’an 710072, China

Abstract

Core–shell structured SiC@SiO2 nanowires and Si@SiO2 nanowires were prepared on the surface of carbon/carbon (C/C) composites by a thermal evaporation method using SiO powders as the silicon source and Ni(NO3)2 as the catalyst. The average diameters of SiC@SiO2 nanowires and Si@SiO2 nanowires are about 145 nm, and the core–shell diameter ratios are about 0.41 and 0.53, respectively. The SiO2 shells of such two nanowires resulted from the reaction between SiO and CO and the reaction of SiO itself, respectively, based on the model analysis. The growth of these two nanowires conformed to the vapor–liquid–solid (VLS) mode. In this mode, CO played an important role in the growth of nanowires. There existed a critical partial pressure of CO (pC) determining the microstructure evolution of nanowires into whether SiC@SiO2 or Si@SiO2. The value of pC was calculated to be 4.01×10−15 Pa from the thermodynamic computation. Once the CO partial pressure in the system was greater than the pC, SiO tended to react with CO, causing the formation of SiC@SiO2 nanowires. However, the decomposition of SiO played a predominant role and the products mainly consisted of Si@SiO2 nanowires. This work may be helpful for the regulation of the growth process and the understanding of the growth mechanism of silicon-based nanowires.

Keywords: growth mechanism, thermal evaporation, SiC@SiO2 nanowires, Si@SiO2 nanowires, carbon/carbon (C/C) composites

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Publication history
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Publication history

Received: 29 January 2022
Revised: 13 May 2022
Accepted: 28 May 2022
Published: 18 August 2022
Issue date: September 2022

Copyright

© The Author(s) 2022.

Acknowledgements

This work was supported by the National Natural Science Foundation of China (Nos. 52061135102, 52101098), Innovation Talent Promotion Plan of Shaanxi Province for Science and Technology Innovation Team (No. 2020TD-003), Young Talents for Science and Technology Association supported by Shaanxi Province (No. 20200406), the Fund of Key Laboratory of National Defense Science and Technology in Northwestern Polytechnical University (No. JCKYS2020607003), and Innovation and Entrepreneurship Training Program for College Students (No. 202110699088). The authors also thank the Analytical & Testing Center of Northwestern Polytechnical University for the characterization of our samples. We also thank Tao Li, Guanghui Feng, Yuqi Wang, and Dou Hu, who provided some experimental help during the research and help in revising this paper.

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