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Journal of Advanced Ceramics 2016, 5(3): 253-261 https://doi.org/10.1007/s40145-016-0197-x
Research Article | Open Access | Issue | Published: 21 August 2016

Investigation on the laser ablation of SiC ceramics using micro-Raman mapping technique

Show Author's Information Chaoli FUa,b,  Yong YANGa( ),  Zhengren HUANGa( ),  Guiling LIUa,  Hui ZHANGa,  Fang JIANGa,  Yuquan WEIa,  Zheng JIAOb
Structural Ceramic Engineering Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, China
College of Environmental and Chemical Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China
Keywords:
oxidation, silicon carbide (SiC), laser ablation, micro-Raman mapping technique, decomposition
Cite this article:
FU C, YANG Y, HUANG Z, et al. Investigation on the laser ablation of SiC ceramics using micro-Raman mapping technique. Journal of Advanced Ceramics, 2016, 5(3): 253-261. https://doi.org/10.1007/s40145-016-0197-x
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Abstract Full text About this article

Research on the laser ablation behavior of SiC ceramics has great significance for the improvement of their anti-laser ability as high-performance mirrors in space and lasers, or the laser surface micro-machining technology as electronic components in micro-electron mechanical systems (MEMS). In this work, the laser ablation of SiC ceramics has been performed by using laser pulses of 12 ns duration at 1064 nm. The laser induced damage threshold (LIDT) below 0.1 J/cm2 was obtained by 1-on-1 mode and its damage morphology appeared in the form of “burning crater” with a clear boundary. Micro-Raman mapping technique was first introduced in our study on the laser ablation mechanisms of SiC surface by identifying physical and chemical changes between uninjured and laser-ablated areas. It has been concluded that during the ablation process, SiC surface mainly underwent decomposition to the elemental Si and C, accompanied by some transformation of crystal orientation. The oxidation of SiC also took place but only in small amount on the edges of target region, while there was no hint of SiO2 in the center with higher energy density, maybe because of deficiency of O2 atmosphere in the ablated area, elimination of SiO2 by carbon at 1505 ℃, or evaporating at 2230 ℃.


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About this article

Investigation on the laser ablation of SiC ceramics using micro-Raman mapping technique

Show Author's information Chaoli FUa,b, Yong YANGa( ), Zhengren HUANGa( ), Guiling LIUa, Hui ZHANGa, Fang JIANGa, Yuquan WEIa, Zheng JIAOb
Structural Ceramic Engineering Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, China
College of Environmental and Chemical Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China

Abstract

Research on the laser ablation behavior of SiC ceramics has great significance for the improvement of their anti-laser ability as high-performance mirrors in space and lasers, or the laser surface micro-machining technology as electronic components in micro-electron mechanical systems (MEMS). In this work, the laser ablation of SiC ceramics has been performed by using laser pulses of 12 ns duration at 1064 nm. The laser induced damage threshold (LIDT) below 0.1 J/cm2 was obtained by 1-on-1 mode and its damage morphology appeared in the form of “burning crater” with a clear boundary. Micro-Raman mapping technique was first introduced in our study on the laser ablation mechanisms of SiC surface by identifying physical and chemical changes between uninjured and laser-ablated areas. It has been concluded that during the ablation process, SiC surface mainly underwent decomposition to the elemental Si and C, accompanied by some transformation of crystal orientation. The oxidation of SiC also took place but only in small amount on the edges of target region, while there was no hint of SiO2 in the center with higher energy density, maybe because of deficiency of O2 atmosphere in the ablated area, elimination of SiO2 by carbon at 1505 ℃, or evaporating at 2230 ℃.

Keywords: oxidation, silicon carbide (SiC), laser ablation, micro-Raman mapping technique, decomposition

References(36)

[1]
Jiang F, Liu Y, Yang Y, et al. Research progress of optical fabrication and surface-microstructure modification of SiC. Journal of Nanomaterials 2012, 2012: 984048.
DOI Google Scholar
[2]
Liu G, Huang Z, Liu X, et al. Removal behaviors of different SiC ceramics during polishing. J Mater Sci Technol 2010, 26: 125–130.
DOI Google Scholar
[3]
Yang YT, Ekinci KL, Huang XMH, et al. Monocrystalline silicon carbide nanoelectromechanical systems. Appl Phys Lett 2001, 78: 162.
DOI Google Scholar
[4]
Mehregany M, Zorman CA. SiC MEMS: Opportunities and challenges for applications in harsh environments. Thin Solid Films 1999, 355–356: 518–524.
DOI Google Scholar
[5]
Mahajan S. Origins of micropipes in SiC crystals. Appl Phys Lett 2002, 80: 4321.
DOI Google Scholar
[6]
Dong Y, Molian P. Femtosecond pulsed laser ablation of 3C SiC thin film on silicon. Appl Phys A-Mater 2003, 77: 839–846.
DOI Google Scholar
[7]
Pecholt B, Gupta S, Molian P. Review of laser microscale processing of silicon carbide. J Laser Appl 2011, 23: 012008.
DOI Google Scholar
[8]
Gupta S, Pecholt B, Molian P. Excimer laser ablation of single crystal 4H-SiC and 6H-SiC wafers. J Mater Sci 2011, 46: 196–206.
DOI Google Scholar
[9]
Zoppel S, Farsari M, Merz R, et al. Laser micro machining of 3C-SiC single crystals. Microelectron Eng 2006, 83: 1400–1402.
DOI Google Scholar
[10]
Farsari M, Filippidis G, Zoppel S, et al. Efficient femtosecond laser micromachining of bulk 3C-SiC. J Micromech Microeng 2005, 15: 1786.
DOI Google Scholar
[11]
Rudolph P, Brzezinka K-W, Wäsche R, et al. Physical chemistry of the femtosecond and nanosecond laser–material interaction with SiC and a SiC–TiC–TiB2 composite ceramic compound. Appl Surf Sci 2003, 208: 285–291.
DOI Google Scholar
[12]
Kreutz EW, Weichenhain R, Wagner R, et al. Microstructuring of SiC by laser ablation with pulse duration from ns to fs range (LAMP2002). RIKEN Review 2003, 2003: 83–86.
Google Scholar
[13]
Wasyluk J, Rainey PV, Perova TS, et al. Investigation of stress and structural damage in H and He implanted Ge using micro-Raman mapping technique on bevelled samples. J Raman Spectrosc 2012, 43: 448–454.
DOI Google Scholar
[14]
Burlacov I, Jirkovský J, Müller M, et al. Induction plasma-sprayed photocatalytically active titania coatings and their characterisation by micro-Raman spectroscopy. Surf Coat Technol 2006, 201: 255–264.
DOI Google Scholar
[15]
Nakashima S, Harima H. Raman investigation of SiC polytypes. phys status solidi a 1997, 162: 39–64.
DOI
[16]
Burton JC, Sun L, Pophristic M, et al. Spatial characterization of doped SiC wafers by Raman spectroscopy. J Appl Phys 1998, 84: 6268.
DOI Google Scholar
[17]
Nakashima S, Kisoda K, Gauthier J-P. Raman determination of structures of long-period SiC polytypes. J Appl Phys 1994, 75: 5354.
DOI Google Scholar
[18]
Brillante A, Bilotti I, Della Valle RG, et al. Characterization of phase purity in organic semiconductors by lattice-phonon confocal Raman mapping: Application to pentacene. Adv Mater 2005, 17: 2549–2553.
DOI Google Scholar
[19]
Pastorczak M, Wiatrowski M, Kozanecki M, et al. Confocal Raman microscopy in 3-dimensional shape and composition determination of heterogeneous systems. J Mol Struct 2005, 744–747: 997–1003.
DOI Google Scholar
[20]
Furuyama N, Hasegawa S, Hamaura T, et al. Evaluation of solid dispersions on a molecular level by the Raman mapping technique. Int J Pharm 2008, 361: 12–18.
DOI Google Scholar
[21]
Chen J, Huang Z, Chen Z, et al. The effect of carbon on surface quality of solid-state-sintered silicon carbide as optical materials. Mater Charact 2014, 89: 7–12.
DOI Google Scholar
[22]
Alvisi M, De Tomasi F, Perrone MR, et al. Laser damage dependence on structural and optical properties of ion-assisted HfO2 thin films. Thin Solid Films 2001, 396: 44–52.
DOI Google Scholar
[23]
ISO 11254-1:2000. Lasers and laser-related equipment— Determination of laser-induced damage threshold of optical surfaces—Part 1: 1-on-1 test. 2000.
[24]
Wu SG, Tian GL, Xia ZL, et al. Influence of negative ion element impurities on laser induced damage threshold of HfO2 thin film. Appl Surf Sci 2006, 253: 1111–1115.
DOI Google Scholar
[25]
Xu ZJ. Detection and Analysis on Semiconductor, 2nd end. Beijing: Science Press, 2007: 28–194.
[26]
Stadelmann R, Hughes B, Orlovskaya N, et al. 2D Raman mapping and thermal residual stresses in SiC grains of ZrB2–SiC ceramic composites. Ceram Int 2015, 41: 13630–13637.
DOI Google Scholar
[27]
Yu T, Ni Z, Du C, et al. Raman mapping investigation of graphene on transparent flexible substrate: The strain effect. J Phys Chem C 2008, 112: 12602–12605.
DOI Google Scholar
[28]
Goehlert K, Irmer G, Michalowsky L, et al. Polytype analysis of SiC powders by Raman spectroscopy. J Mol Struct 1990, 219: 135–140.
DOI Google Scholar
[29]
Palma C, Rossi MC, Sapia C, et al. Laser-induced crystallization of amorphous silicon–carbon alloys studied by Raman microspectroscopy. Appl Surf Sci 1999, 138–139: 24–28.
DOI Google Scholar
[30]
Veprek S, Sarott F-A, Iqbal Z. Effect of grain boundaries on the Raman spectra, optical absorption, and elastic light scattering in nanometer-sized crystalline silicon. Phys Rev B 1987, 36: 3344.
DOI Google Scholar
[31]
Yi J, He XD, Sun Y. Characterization of the evaporation behavior of a β-SiC target during electron beam-physical vapor deposition. J Alloys Compd 2010, 491: 436–440.
DOI Google Scholar
[32]
Yao X-M, Liang H-Q, Liu X-J, et al. Effect of carbon source and adding ratio on the microstructure and properties of solid-state sintering silicon carbide. J Inorg Mater 2013, 28: 1009–1013.
DOI Google Scholar
[33]
Jia TQ, Xu ZZ, Li XX, et al. Microscopic mechanisms of ablation and micromachining of dielectrics by using femtosecond lasers. Appl Phys Lett 2003, 82: 4382–4384.
DOI Google Scholar
[34]
Murahara MM. Excimer-laser-induced photochemical polishing of SiC mirror. In Proceedings of SPIE4679, Laser-Induced Damage in Optical Materials, 2001: 69.
Google Scholar
[35]
Maekawa M, Kawasuso A, Chen ZQ, et al. Structural defects in SiO2/SiC interface probed by a slow positron beam. Appl Surf Sci 2005, 244: 322–325.
DOI Google Scholar
[36]
Kurimoto H, Shibata K, Kimura C, et al. Thermal oxidation temperature dependence of 4H-SiC MOS interface. Appl Surf Sci 2006, 253: 2416–2420.
DOI Google Scholar
Publication history
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Publication history

Received: 13 April 2016
Revised: 25 May 2016
Accepted: 14 June 2016
Published: 21 August 2016
Issue date: September 2016

Copyright

© The author(s) 2016

Acknowledgements

This work is supported by funds from the National Natural Science Foundation of China (NSFC, Contract Nos. 51102266 and 51471182).

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