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Research Article

Simulation and structure optimization of triboelectric nanogenerators considering the effects of parasitic capacitance

Keren Dai1, Xiaofeng Wang1( ), Simiao Niu2( ), Fang Yi3, Yajiang Yin1, Long Chen4, Yue Zhang3, Zheng You1( )
Collaborative Innovation Center for Micro/Nano Fabrication,Device and System, State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University,Beijing,100084,China;
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA30332-0245, USA
State Key Laboratory for Advanced Metals and Materials,School of Materials Science and Engineering, Beijing Municipal Key Laboratory of New Energy Materials and Technologies, University of Science and Technology Beijing,Beijing,100083,China;
Broadcom Ltd., 2901 Via Fortuna #400, Austin, TX, 78746, USA
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Abstract

Parasitic capacitance is an unavoidable and usually unwanted capacitance that exists in electric circuits, and it is the most important second-order non-ideal effect that must be considered while designing a triboelectric nanogenerator (TENG) because its magnitude is comparable to the magnitude of the TENG capacitance. This paper investigates the structure and performance optimization of TENGs through modeling and simulation, taking the parasitic capacitance into account. Parasitic capacitance is generally found to cause severe performance degradation in TENGs, and its effects on the optimum matching resistance, maximum output power, and structural figures-of-merit (FOMs) of TENGs are thoroughly investigated and discussed. Optimum values of important structural parameters such as the gap and electrode length are determined for the different working modes of TENGs, systematically demonstrating how these optimum structural parameters change as functions of the parasitic capacitance. Additionally, it is demonstrated that the parasitic capacitance can improve the height tolerance of the metal freestanding-mode TENGs. This work provides a theoretical foundation for the structure and performance optimization of TENGs for practical applications and promotes the development of mechanical energy-harvesting techniques.

Keywords

triboelectric nanogeneratorparasitic capacitancefigure of meritstructure optimizationperformance optimization

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Nano Research
Volume 10 Issue 1,
January 2017
Pages 157-171
DOI: 10.1007/s12274-016-1275-7
Cite this article:
Dai K, Wang X, Niu S, et al. Simulation and structure optimization of triboelectric nanogenerators considering the effects of parasitic capacitance. Nano Research, 2017, 10(1): 157-171. https://doi.org/10.1007/s12274-016-1275-7

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Received: 11 July 2016
Revised: 28 August 2016
Accepted: 31 August 2016
Published: 13 October 2016
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016
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