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Recently, we achieved atomic-resolution optical imaging with near-field scanning optical microscopy using photon-induced force detection. In this technique, the surface photovoltage of the silicon-tip apex induced by the optical near field on the surface is measured as the electrostatic force. We demonstrated atomicresolution imaging of the near field on the α -Al2O3 (0001) surface of a prism. We investigated the spatial distribution of the near field by scanning at different tip-sample distances and found that the atomic corrugation of the near-field signal was observed at greater distances than that of the atomic force microscopy signal. As the tip-sample distance increased, the normalized signal-to-noise ratio of the near field is in a gradual decline almost twice that of the frequency shift (Δf ).

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Publication history

Received: 01 July 2015
Revised: 05 October 2015
Accepted: 30 October 2015
Published: 09 December 2015
Issue date: February 2016

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© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2015

Acknowledgements

Acknowledgements

We are grateful valuable discussions with Dr. C. Barth of CINaM-CNRS and Prof. M. Reichling of Universität Osnabrück. We acknowledge support through a Grant-in-Aid for Scientific Research from the Japan Society for the Promotion of Science (JSPS) and the Photonics Advanced Research Center (PARC) program of the Ministry of Education, Culture, Sports, Science and Technology (MEXT).

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Reprints and Permission requests may be sought directly from editorial office.
Email: nanores@tup.tsinghua.edu.cn

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