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In this study, we propose a novel combination of tunneling field-effect transistors (TFETs) with asymmetrically doped p+-i-n+ silicon nanowire (SiNW) channels on a bendable substrate. The combination of two n-channel SiNW-TFETs (NWTFETs) in parallel and two p-channel NWTFETs in series operates as a two-input NOR logic gate. The component NWTFETs with the n- and p-channels exhibit subthreshold swings (SSs) of 69 and 53 mV·dec-1, respectively, and the on/off current ratios are ~106. The NOR logic operation is sustainable and reproducible for up to 1, 000 bending cycles with a narrow transition width of ~0.26 V. The mechanical bendability of the bendable NWTFETs shows that they are stable and have good fatigue properties. To the best of our knowledge, this is the first study on the electrical and mechanical characteristics of a bendable NOR logic gate composed of NWTFETs.

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Publication history

Received: 04 July 2015
Revised: 05 October 2015
Accepted: 29 October 2015
Published: 09 December 2015
Issue date: February 2016

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© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2015

Acknowledgements

Acknowledgements

This work was supported in part by the Mid-career Researcher Program (No. NRF-2013R1A2A1A03070750) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology and the KSSRC program (Development of printable integrated circuits based on inorganic semiconductor nanowires).

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Email: nanores@tup.tsinghua.edu.cn

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