A memristor that can emulate biological synapses is a promising basic-processing unit in neural-network computation. Here we propose a new-conceptual memristor based on a memoristive interface composed of two types of non-memristive materials, successfully realizing continuously tunable resistance controlled by both voltage (current) and applied time of a single pulse with a swift response comparable with synapses. The brain-like memorizing capability of the memristor is demonstrated. The memoristive mechanism in the interface is thought to be dominated by a Schottky barrier tuned by the capture/release of the carriers in interface traps with dispersive energy.
This work was partly supported by an EU-FP7 Project (No. 247644), the China State Key Projects of Basic Research (Grant No. 2010CB934102), the National Science Foundation of China (Grant No. 11374069), and the Chinese Academy of Sciences Strategic Pilot Program (No. XDA09020300)
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