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Hydrogenated amorphous Si (α -Si: H) is a promising material for photovoltaic applications due to its low cost, high abundance, long lifetime, and non-toxicity. We demonstrate a device designed to investigate the effect of nanostructured back reflectors on quantum efficiency in photovoltaic devices. We adopt a superstrate configuration so that we may use conventional industrial light trapping strategies for thin film solar cells as a reference for comparison. We controlled the nanostructure parameters via a wafer-scale self-assembly technique and systematically studied the relation between nanostructure size and photocurrent generation. The gain/loss transition at short wavelengths showed red-shifts with decreasing nanostructure scale. In the infrared region the nanostructured back reflector shows large photocurrent enhancement with a modified feature scale. This device geometry is a useful archetype for investigating absorption enhancement by nanostructures.

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Publication history

Received: 05 October 2010
Revised: 21 October 2010
Accepted: 24 October 2010
Published: 01 February 2011
Issue date: February 2011

Copyright

© The Author(s) 2010

Acknowledgements

Acknowledgements

We thank Dr. Tiemin Zhao and Dr. Zongfu Yu for material deposition and optical discussion.

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This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.

Reprints and Permission requests may be sought directly from editorial office.
Email: nanores@tup.tsinghua.edu.cn

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