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Nano Research 2008, 1(5): 361-394 https://doi.org/10.1007/s12274-008-8043-2
Review Article | Open Access | Issue | Published: 01 October 2008

Charge Transport in Disordered Graphene-Based Low Dimensional Materials

Show Author's Information Alessandro Cresti1,2,  Norbert Nemec3,  Blanca Biel1,2,  Gabriel Niebler4,5,  François Triozon1,  Gianaurelio Cuniberti4,  Stephan Roche2( )
CEALETI, MINATECF38054Grenoble, France
CEAInstitute for Nanoscience and CryogenicsINAC/SPSMS/GT, 17 rue des Martyrs38054Grenoble Cedex 9, France
Theory of Condensed Matter GroupCavendish Laboratory, University of Cambridge, Trinity Lane, CambridgeCB2 17NUK
Institute for Materials ScienceTU DresdenD-01062Germany
Department of Condensed Matter PhysicsFaculty of Mathematics and PhysicsCharles University, Ke Karlovu 5121 16Prague 2, Czech Rep
Keywords:
Graphene, charge transport, carbon nanotubesIntroduction
Cite this article:
Cresti A, Nemec N, Biel B, et al. Charge Transport in Disordered Graphene-Based Low Dimensional Materials. Nano Research, 2008, 1(5): 361-394. https://doi.org/10.1007/s12274-008-8043-2
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Abstract Full text About this article

Two-dimensional graphene, carbon nanotubes, and graphene nanoribbons represent a novel class of low dimensional materials that could serve as building blocks for future carbon-based nanoelectronics. Although these systems share a similar underlying electronic structure, whose exact details depend on confinement effects, crucial differences emerge when disorder comes into play. In this review, we consider the transport properties of these materials, with particular emphasis on the case of graphene nanoribbons. After summarizing the electronic and transport properties of defect-free systems, we focus on the effects of a model disorder potential (Anderson-type), and illustrate how transport properties are sensitive to the underlying symmetry. We provide analytical expressions for the elastic mean free path of carbon nanotubes and graphene nanoribbons, and discuss the onset of weak and strong localization regimes, which are genuinely dependent on the transport dimensionality. We also consider the effects of edge disorder and roughness for graphene nanoribbons in relation to their armchair or zigzag orientation.


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About this article

Charge Transport in Disordered Graphene-Based Low Dimensional Materials

Show Author's information Alessandro Cresti1,2, Norbert Nemec3, Blanca Biel1,2, Gabriel Niebler4,5, François Triozon1, Gianaurelio Cuniberti4, Stephan Roche2( )
CEALETI, MINATECF38054Grenoble, France
CEAInstitute for Nanoscience and CryogenicsINAC/SPSMS/GT, 17 rue des Martyrs38054Grenoble Cedex 9, France
Theory of Condensed Matter GroupCavendish Laboratory, University of Cambridge, Trinity Lane, CambridgeCB2 17NUK
Institute for Materials ScienceTU DresdenD-01062Germany
Department of Condensed Matter PhysicsFaculty of Mathematics and PhysicsCharles University, Ke Karlovu 5121 16Prague 2, Czech Rep

Abstract

Two-dimensional graphene, carbon nanotubes, and graphene nanoribbons represent a novel class of low dimensional materials that could serve as building blocks for future carbon-based nanoelectronics. Although these systems share a similar underlying electronic structure, whose exact details depend on confinement effects, crucial differences emerge when disorder comes into play. In this review, we consider the transport properties of these materials, with particular emphasis on the case of graphene nanoribbons. After summarizing the electronic and transport properties of defect-free systems, we focus on the effects of a model disorder potential (Anderson-type), and illustrate how transport properties are sensitive to the underlying symmetry. We provide analytical expressions for the elastic mean free path of carbon nanotubes and graphene nanoribbons, and discuss the onset of weak and strong localization regimes, which are genuinely dependent on the transport dimensionality. We also consider the effects of edge disorder and roughness for graphene nanoribbons in relation to their armchair or zigzag orientation.

Keywords: Graphene, charge transport, carbon nanotubesIntroduction

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Publication history
Copyright
Acknowledgements
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Publication history

Received: 11 August 2008
Revised: 22 September 2008
Accepted: 23 September 2008
Published: 01 October 2008
Issue date: October 2008

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© Tsinghua Press and Springer-Verlag 2008

Acknowledgements

We acknowledge fruitful and enlightening discussions with Tsuneya Ando, Hongjie Dai, Toshiaki Enoki, Philip Kim, Kentaro Nomura, Rudolf A. Roemer, Riichiro Saito, Miriam del Valle, and Carter T. White. This work was partially supported by the ANR/PNANO project ACCENT, by the FP7/ ICT/FET GRAND project, by the "Graphene Project" of CARNOT Institute-Leti, by the European Union project "Carbon Nanotube Devices at the Quantum Limit" (CARDEQ) under contract No. IST-021285, by the Volkswagen Stiftung under Grant No. I/78 340, by the DFG Priority Program "Quantum Transport at the Molecular Scale" SPP1243 and by DAAD. Computing time provided by the ZIH at the Dresden University of Technology is also acknowledged.

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