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Research Article | Online first | Published: 30 April 2024

A record-breaking low turn-on voltage blue QLED via reducing built-in potential

Show Author's Information Run Wang1,  Hengyang Xiang1( ),  Chi Zhang2,  Hongyang Li1,  Yuqin Su1,  Qi Chen2( ),  Qinye Bao3,  Gaoran Li1,  Haibo Zeng1( )
MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
i-Lab, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
School of Physics and Electronic Science East China Normal University, Shanghai 200241, China
Keywords:
built-in potential, high brightness, low turn-on voltage, quantum dot light-emitting diodes (QLEDs)
Topics:
Light emitting diodes
Cite this article:
Wang R, Xiang H, Zhang C, et al. A record-breaking low turn-on voltage blue QLED via reducing built-in potential. Nano Research, 2024, https://doi.org/10.1007/s12274-024-6570-0
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Abstract Full text Electronic supplementary material About this article

Developing light-emitting diodes (LEDs) with the merits of low driving and high brightness has always been attractive. Considering the carrier dynamic process under electroexcitation, the built-in potential (Vbi) represents the moment that the photons start to be produced in a LED. However, it has not been carefully studied and discussed. Here, we observed that by employing an interface regulation strategy to enhance hole concentration, the Vbi of quantum dot LEDs (QLEDs) can be reduced. Combined with the characterization methods of Mott–Schottky (MS) and scanning Kelvin probe microscopy (SKPM), the key indicator of Vbi on driving voltage for QLEDs is confirmed. Profiting from the reduction of Vbi, a record-breaking ultra-low turn-on voltage of 2.2 V (@1 cd/m2) is achieved in a blue QLED. The blue QLED shows an advantage of high brightness under low driving voltages, i.e., 1000 cd/m2@3.10 V and 5000 cd/m2@3.88 V. This work proposes a reference strategy to predict and analyze the driving voltage issue, which is beneficial to facilitating the development of low-driving QLEDs in the future.


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Electronic supplementary material
About this article

A record-breaking low turn-on voltage blue QLED via reducing built-in potential

Show Author's information Run Wang1, Hengyang Xiang1( ), Chi Zhang2, Hongyang Li1, Yuqin Su1, Qi Chen2( ), Qinye Bao3, Gaoran Li1, Haibo Zeng1( )
MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
i-Lab, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
School of Physics and Electronic Science East China Normal University, Shanghai 200241, China

Abstract

Developing light-emitting diodes (LEDs) with the merits of low driving and high brightness has always been attractive. Considering the carrier dynamic process under electroexcitation, the built-in potential (Vbi) represents the moment that the photons start to be produced in a LED. However, it has not been carefully studied and discussed. Here, we observed that by employing an interface regulation strategy to enhance hole concentration, the Vbi of quantum dot LEDs (QLEDs) can be reduced. Combined with the characterization methods of Mott–Schottky (MS) and scanning Kelvin probe microscopy (SKPM), the key indicator of Vbi on driving voltage for QLEDs is confirmed. Profiting from the reduction of Vbi, a record-breaking ultra-low turn-on voltage of 2.2 V (@1 cd/m2) is achieved in a blue QLED. The blue QLED shows an advantage of high brightness under low driving voltages, i.e., 1000 cd/m2@3.10 V and 5000 cd/m2@3.88 V. This work proposes a reference strategy to predict and analyze the driving voltage issue, which is beneficial to facilitating the development of low-driving QLEDs in the future.

Keywords: built-in potential, high brightness, low turn-on voltage, quantum dot light-emitting diodes (QLEDs)

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Publication history
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Acknowledgements

Publication history

Received: 03 December 2023
Revised: 31 January 2024
Accepted: 17 February 2024
Published: 30 April 2024

Copyright

© Tsinghua University Press 2024

Acknowledgements

Acknowledgements

Financial support was from the National Key Research and Development Program of China (No. 2022YFB3606502), the National Natural Science Foundation of China (Nos. 52131304, 62004101, 62261160392, and 22022205), Jiangsu graduate and practice innovation program (No. KYCX23_0456), and the Fundamental Research Funds for the Central Universities (No. 30920041117).

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